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| GaAs SP4T Terminated Switch DC - 2 GHz Features q q q q q q q q SW-419 SO-24 Very Low Power Consumption: 100 W Low Insertion Loss: 1 dB High Isolation: 25 dB up to 2 GHz Very High Intercept Point: 46 dBm IP3 Nanosecond Switching Speed Temperature Range: -40C to +85C Low Cost SOIC24 Plastic Package Tape and Reel Packaging Available1 Description M/A-COM's SW-419 is a GaAs MMIC SP4T terminated switch in a low cost SOIC 24-lead wide body surface mount plastic package. The SW-419 is ideally suited for use where very low power consumption is required. Typical applications include switch matrices, and filter banks in systems such as: radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment. The SW-419 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features full chip passivation for increased performance and reliability. Ordering Information Part No. Package SOIC 24-Lead Plastic Package Forward Tape & Reel Reverse Tape & Reel Unit dB dB dB dB dB dB dB dB Min. Typ. 0.8 0.8 0.9 1.2 60 51 39 24 1.3:1 1.3:1 8 16 15 21 27 45 60 35 46 Max 1.0 1.1 1.2 1.4 SW-419 PIN SW-419 TR SW-419 RTR Electrical Specifications, TA = +25C Parameter Insertion Loss Test Conditions2 Isolation DC - 0.1 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 0.1 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz On Off 10% to 90% RF, 90% to 10% RF 50% Control to 90% RF, 50% Control to 10% RF In Band Input Power 0.05 GHz Input Power 0.5 - 2.0 GHz Measured Relative 0.05 GHz to Input Power 0.5 - 2.0 GHz (for two-tone input power up to +5 dBm) Measured Relative 0.05 GHz to Input Power 0.5 - 2.0 GHz (for two-tone input power up to +5 dBm) 54 46 36 20 VSWR Trise, Tfall Ton, Toff Transients One dB Compression IP2 nS nS mV dBm dBm dBm dBm dBm dBm IP3 1. Refer to "Tape and Reel Packaging" Section, or contact factory. 2. All measurements with 0, -5 V control voltages at 1 GHz in a 50 system, unless otherwise specified. GaAs SP4T Terminated Switch SW-419 V 2.00 Absolute Maximum Ratings 1 Parameter Max. Input Power Below 500 MHz Above 500 MHz Control Voltage Storage Temperature Absolute Maximum +27 dBm +30 dBm +5 V, - 8.5 V -65 to +150C Functional Schematic 1.Operation of this device above any one of these parameters may cause permanent damage. Typical Performance Pin Configuration Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 Description RF Common GND GND RF1 GND GND RF2 GND A2 A1 B1 B2 Pin No. 13 14 15 16 17 18 19 20 21 22 23 24 Description B3 B4 A4 A3 GND RF3 GND GND RF4 GND GND GND Truth Table Control Input A1 B1 A2 B2 A3 B3 A4 B4 1 0 0 0 0 1 1 1 0 1 0 0 1 0 1 1 0 0 1 0 1 1 0 1 0 0 0 1 1 1 1 0 Condition Of Switch RF Common to Each RF Port RF1 On Off Off Off RF2 Off On Off Off RF3 Off Off On Off RF4 Off Off Off On "0" - 0 - -0.2 V @ 20 A max "1" - -5 V @ 20 A Typ to -8 V @ 300 A max. Electrical Schematic |
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